8NM60 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness
* SYMBOL
Power MOSFET
*.
in switching power supplies and adaptors.
* FEATURES
* RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast Switching Capabili.
The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually.
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